Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-04-26

2011-04-26

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C438S462000, C257SE21511

Reexamination Certificate

active

07932132

ABSTRACT:
A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes: a casing, a board and a semiconductor chip. The chip includes: an element part; a heat sink bonded to the element part; an insulating layer located on the heat sink so that the heat sink is located between the element part and the insulating layer; and a side wall insulating layer covering all of end faces of the heat sink. The semiconductor chip is located between the casing and the board, so that the insulating layer is directed to the casing to enable heat radiation from the heat sink toward the casing via the insulating layer.

REFERENCES:
patent: 6156980 (2000-12-01), Peugh et al.
patent: 6180881 (2001-01-01), Isaak
patent: 6873043 (2005-03-01), Oman
patent: 6927471 (2005-08-01), Salmon
patent: 2007/0278550 (2007-12-01), Asai et al.
patent: A-11-087573 (1999-03-01), None
patent: A-11-145352 (1999-05-01), None
patent: A-2003-031725 (2003-01-01), None
patent: A-2008-16818 (2008-01-01), None
Office Action issued on Mar. 16, 2010 by the Japan Patent Office in corresponding Japanese Application No. 2008-288656 (English translation enclosed).

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2670596