Non-volatile multilevel memory cell programming

Details Non-volatile multilevel memory cell programming Non-volatile multilevel memory cell programming

2011-05-17

2011-05-17

Dinh, Son T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185190, C365S185250

Reexamination Certificate

active

07944757

ABSTRACT:
Embodiments of the present disclosure provide methods, devices, modules, and systems for programming multilevel non-volatile multilevel memory cells. One method includes increasing a threshold voltage (Vt) for each of a number of memory cells until the Vt reaches a verify voltage (VFY) corresponding to a program state among a number of program states. The method includes determining whether the Vt of each of the cells has reached a pre-verify voltage (PVFY) associated with the program state, selectively biasing bit lines coupled to those cells whose Vt has reached the PVFY, adjusting the PVFY to a different level, and selectively biasing bit lines coupled to cells whose Vt has reached the adjusted PVFY, wherein the PVFY and the adjusted PVFY are less than the VFY.

REFERENCES:
patent: 6643188 (2003-11-01), Tanaka et al.
patent: 6671207 (2003-12-01), Parker
patent: 6778442 (2004-08-01), Hamilton et al.
patent: 6888758 (2005-05-01), Hemink et al.
patent: 6937518 (2005-08-01), Park
patent: 7031214 (2006-04-01), Tran
patent: 7035146 (2006-04-01), Hemink et al.
patent: 7042766 (2006-05-01), Wang et al.
patent: 7136304 (2006-11-01), Cohen et al.
patent: 2002/0154545 (2002-10-01), Tanaka et al.
patent: 2005/0162916 (2005-07-01), Guterman et al.
patent: 2006/0285392 (2006-12-01), Incarnati et al.
patent: 1 324 343 (2003-07-01), None
International Search Report and Written Opinion for related PCT Application PCT/US2008/004114, dated Jul. 29, 2008 (21 pgs.).

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