Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-03-29
2011-03-29
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S194000, C257SE29249, C257SE29250, C257SE29251, C257SE21403
Reexamination Certificate
active
07915608
ABSTRACT:
A quantum well device and a method for manufacturing the same are disclosed. In one aspect, the device includes a quantum well region overlying a substrate, a gate region overlying a portion of the quantum well region, a source and drain region adjacent to the gate region. The quantum well region includes a buffer structure overlying the substrate and including semiconductor material having a first band gap, a channel structure overlying the buffer structure including a semiconductor material having a second band gap, and a barrier layer overlying the channel structure and including an un-doped semiconductor material having a third band gap. The first and third band gap are wider than the second band gap. Each of the source and drain region is self-aligned to the gate region and includes a semiconductor material having a doped region and a fourth band gap wider than the second band gap.
REFERENCES:
patent: 5373168 (1994-12-01), Ando et al.
patent: 2005/0023555 (2005-02-01), Yoshida et al.
patent: 2007/0045670 (2007-03-01), Kuraguchi
patent: 2007/0102727 (2007-05-01), Twynam
patent: 2007/0269968 (2007-11-01), Saxler et al.
patent: 1 883 115 (2008-01-01), None
patent: WO2008/021544 (2008-02-01), None
Cai, et al., “Enhancement-Mode A1GaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage”IEICE Trans. Electron.(2006) E89-C: 1025-1030.
European Search Report dated Jun. 25, 2009, issued in European Patent Application No. 08168648.7.
Eneman Geert
Hellings Geert
Meuris Marc
IMEC
Katholieke Universiteit Leuven
Knobbe Martens Olson & Bear LLP
Patton Paul E
Smith Zandra
LandOfFree
Scalable quantum well device and method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Scalable quantum well device and method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scalable quantum well device and method for manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2668821