Thin film capacitor, thin film capacitor-embedded printed...

Electricity: conductors and insulators – Conduits – cables or conductors – Preformed panel circuit arrangement

Reexamination Certificate

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C174S256000

Reexamination Certificate

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07943858

ABSTRACT:
There is provided a thin film capacitor and a capacitor-embedded printed board improved in leakage current characteristics. A dielectric layer is formed of a BiZnNb-based amorphous metal oxide with a predetermined dielectric constant without being heat treated at a high temperature, and metallic phase bismuth of the BiZnNb-based amorphous metal oxide is adjusted in content to attain a desired dielectric constant. Also, another dielectric layer having a different content of metallic phase bismuth may be formed. The thin film capacitor including: a first electrode; a dielectric layer including a first dielectric film formed on the first electrode, the dielectric layer comprising a BiZnNb-based amorphous metal oxide; and a second electrode formed on the dielectric layer, wherein the BiZnNb-based amorphous metal oxide contains metallic phase bismuth.

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Chinese Office Action, with English translation, issued in Chinese Patent Application No. 200810088819.2, mailed Jul. 27, 2010.
Park, J.H., et al., “Bismuth-zinc-niobate embedded capacitors grown at room temperature for printed circuit board applications”, Applied Physics Letters, 2006, vol. 88 192902, American Institute of Physics.

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