Group III nitride-based compound semiconductor...

Details Group III nitride-based compound semiconductor... Group III nitride-based compound semiconductor...

2011-08-02

2011-08-02

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S022000, C438S042000, C438S044000, C257S079000, C257S080000, C257S098000, C257SE21097, C257SE21108, C257SE21126, C257SE21117, C257SE21398, C257SE21386

Reexamination Certificate

active

07989238

ABSTRACT:
Provided is a Group III nitride-based compound semiconductor light-emitting device including aluminum regions. The Group III nitride-based compound semiconductor light-emitting device includes a sapphire substrate; aluminum regions which are formed on the substrate; an AlN buffer layer; an Si-doped GaN n-contact layer; an n-cladding layer formed of multiple layer units, each including an undoped In0.1Ga0.9N layer, an undoped GaN layer, and a silicon (Si)-doped GaN layer; an MQW light-emitting layer including alternately stacked eight well layers formed of In0.2Ga0.8N and eight barrier layers formed of GaN and Al0.06Ga0.94N; a p-cladding layer formed of multiple layers including a p-type Al0.3Ga0.7N layer and a p-type In0.08Ga0.92N layer; a p-contact layer having a layered structure including two p-type GaN layers having different magnesium concentrations; and an ITO light-transmitting electrode.

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