Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-05-17
2011-05-17
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S098000
Reexamination Certificate
active
07943950
ABSTRACT:
A substrate (1) made of a transparent material, preferably glass, which substrate has a planar first side (1a) for the application of an electroluminescent layered structure (21, 22, 23) for emitting light and having a structured second side (1b) for the effective coupling-out of light (6), comprising at least one element of structure (2) comprising first regions (3) having first surfaces (3a) that have a surface roughness of between 0.2 μm and 100 μm, and preferably of between 0.4 μm and 70 μm, and as a particular preference of between 0.7 μm and 40 μm.
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Bechtel Hans-Helmut
Busselt Wolfgang
Koninklijke Philips Electronics , N.V.
Menz Douglas M
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