Method for forming contact hole on semiconductor device

Etching a substrate: processes – Masking of a substrate using material resistant to an etchant

Reexamination Certificate

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C438S717000, C438S736000

Reexamination Certificate

active

07862735

ABSTRACT:
A method of forming a relatively fine contact hole using two masks. The two masks may have only their edge portions open, which may overlap each other.

REFERENCES:
patent: 5422205 (1995-06-01), Inoue et al.
patent: 5573634 (1996-11-01), Ham
patent: 7399709 (2008-07-01), Lin et al.
patent: 2002/0015900 (2002-02-01), Petersen
patent: 2003/0215736 (2003-11-01), Oberlander et al.
Mack, Chris A. Field Guide to Optical Lithography. SPIE- International Society for Optical Engineering. Washingon, 2006, p. 38.

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