Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-06-28
2011-06-28
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S447000, C257SE31057
Reexamination Certificate
active
07968963
ABSTRACT:
A photodiode array with reduced optical crosstalk and an image pickup device using it are provided. The photodiode array10according to the present invention has an anti-crosstalk portion B dividing each adjacent pair of photodiodes S, the anti-crosstalk portion B and the photodiodes S individually have a p-type area16extending inward from the surface side of a semiconductor laminate, and the inner end of the p-type area of the anti-crosstalk portion, namely the front, is closer to the back surface of the semiconductor laminate than the front of the p-type area of each of the photodiodes.
REFERENCES:
patent: 4129878 (1978-12-01), Webb
patent: 5157473 (1992-10-01), Okazaki
Cohen et al., “Near-IR imaging cameras operate at room temperature”, Laser Focus World, pp. 109-113 (1993).
Bryant Kiesha R
Sartori Michael A.
Sumitomo Electric Industries Ltd.
Thelen Leigh D.
Venable LLP
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