Phase change memory element and method for forming the same

Details Phase change memory element and method for forming the same Phase change memory element and method for forming the same

2011-01-11

2011-01-11

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE31029, C257SE45001, C257SE21068, C438S095000, C438S238000

Reexamination Certificate

active

07868311

ABSTRACT:
A phase change memory and method for fabricating the same are provided. The phase change memory element includes: a substrate; rectangle-shaped dielectric patterns formed on the substrate and parallel with each other; electric conductive patterns partially covering a first sidewall and the top surface of the dielectric pattern and the substrate to expose the first sidewall and a second sidewall of the dielectric pattern, wherein the electric conductive patterns covering the same dielectric pattern are apart from each other; a phase change spacer formed on the substrate and directly in contact with the exposed first and second sidewalls of the dielectric patterns, wherein the two adjacent electric conductive patterns covering the same dielectric pattern are electrically connected by the phase change spacer; and a dielectric layer formed on the substrate.

REFERENCES:
patent: 7075131 (2006-07-01), Chen
patent: 7119353 (2006-10-01), Lankhorst et al.
patent: 7135727 (2006-11-01), Lee et al.
patent: 7655941 (2010-02-01), Lin et al.
patent: 2004/0248339 (2004-12-01), Lung
patent: 2008/0237565 (2008-10-01), Chang

Affiliated with

Also associated with

Rating

Phase change memory element and method for forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase change memory element and method for forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change memory element and method for forming the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2662681