Sputtering apparatus and method, and sputtering control program

Details Sputtering apparatus and method, and sputtering control program Sputtering apparatus and method, and sputtering control program

2011-05-03

2011-05-03

Nguyen, Nam X (Department: 1724)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C204S298190, C204S298210, C204S298220

Reexamination Certificate

active

07935232

ABSTRACT:
To provide a sputtering apparatus and method, and a sputtering control program which are configured simply and can secure the uniformity of the film thickness from the beginning to the end of the use of a target.There are provided: a target15disposed so as to face an object to be treated19; a permanent magnet unit M which generates a high-density plasma by means of a magnetic field and deposits a material of the target15on the object to be treated, in the form of a film; a rotational mechanism9which rotates the permanent magnet unit M; and a rotation number control apparatus7which gradually changes the number of rotations of the permanent magnet unit M rotated by the rotational mechanism9. The rotation number control apparatus7has a rotation number setting section702bfor setting the number of rotations to be switched, a switching time setting section702afor setting the time for switching, a detection section703for detecting the switching time, a selecting section704for selecting the number of rotations at the switching time, and a switching section705for outputting an instruction of switching to the selected number of rotations.

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