Semiconductor device having an increased area of one of the...

Details Semiconductor device having an increased area of one of the... Semiconductor device having an increased area of one of the...

2011-07-26

2011-07-26

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Chip mounted on chip

C257S758000, C257S686000, C257S782000, C257S783000, C438S109000, C438S118000, C438S622000, C438S406000, C438S455000

Reexamination Certificate

active

07986045

ABSTRACT:
In this semiconductor device, connection parts between wafers are electrically insulated from each other, and a junction face shape of second electrical signal connection parts is larger than the shape of a positioning margin face that is formed by an outer shape when the periphery of a minimum junction face, which has half the area of a junction area of the first electrical signal connection part, is enclosed by a same width dimension as a positioning margin dimension between the first wafer and the second wafer.

REFERENCES:
patent: 2007/0045836 (2007-03-01), Kwon et al.
patent: 2007/0269931 (2007-11-01), Chung et al.
patent: 2007-59769 (2007-03-01), None
patent: WO-2007/024022 (2007-03-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having an increased area of one of the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having an increased area of one of the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having an increased area of one of the... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2661695