Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2011-06-28
2011-06-28
Ho, Tu-Tu V (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257S101000, C257S087000, C257S102000, C257SE33011, C257SE33043, C372S045010, C372S046013, C372S050100, C118S719000, C118S630000
Reexamination Certificate
active
07968362
ABSTRACT:
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
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Itoh Akihiro
Jikutani Naoto
Kaminishi Morimasa
Sato Shun'ichi
Takahashi Takashi
Dickstein & Shapiro LLP
Ho Tu-Tu V
Ricoh & Company, Ltd.
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