Photoelectric conversion element including a mixed layer of...

Details Photoelectric conversion element including a mixed layer of... Photoelectric conversion element including a mixed layer of...

2011-01-04

2011-01-04

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257SE51012

Reexamination Certificate

active

07863605

ABSTRACT:
A photoelectric conversion element is provided and includes a photoelectric conversion portion. The photoelectric conversion portion includes: a pair of electrodes; and a photoelectric conversion layer between the pair of electrodes, and at least part of the photoelectric conversion layer includes a mixed layer of a p-type organic semiconductor and a fullerene, and a mixing ratio of the fullerene to the p-type organic semiconductor in terms of thickness ratio is less than 1:1.

REFERENCES:
patent: 2004/0056180 (2004-03-01), Yu
patent: 2005/0224905 (2005-10-01), Forrest et al.
patent: 2006/0027834 (2006-02-01), Forrest et al.
patent: 2008/0116536 (2008-05-01), Forrest et al.
patent: 9-74216 (1997-03-01), None
patent: 2004-165474 (2004-06-01), None
patent: 2007-123707 (2007-05-01), None

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