Semiconductor device and method for manufacturing same

Details Semiconductor device and method for manufacturing same Semiconductor device and method for manufacturing same

2011-07-26

2011-07-26

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S209000

Reexamination Certificate

active

07986025

ABSTRACT:
When a metal cap film is provided on an electric fuse, the break-ability of the electric fuse is reduced. A semiconductor device1includes interconnects10, an electric fuse20and metal cap films30. Both of the interconnects10and the electric fuse20are composed of Cu. The interconnects10and the electric fuse20are provided in the same layer in the interconnect layer40. The metal cap films30are provided only on the interconnects10and not provided on the electric fuse20.

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