Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-07-05
2011-07-05
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185030, C365S185230
Reexamination Certificate
active
07974131
ABSTRACT:
A nonvolatile memory wherein remaining lifetimes of memory cells can be accurately determined is provided, the nonvolatile memory includes: plural memory cell groups, assigned with respective addresses, arranged for respective words and used for storing one word of data; plural dummy cell groups also assigned the respective addresses and having different ranks of rewriting lifetimes; a writing circuit which, when writing data into a memory cell group having a given address, also writes the data into a dummy cell group having the same address at the same time; a lifetime recognizing circuit which recognizes an estimated number of past writing times by determining whether each dummy cell group can be successfully accessed; and a control section which controls operations of the memory cell groups and the dummy cell groups in response to an externally given command.
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Fujitsu Limited
Fujitsu Patent Center
Hidalgo Fernando N
Ho Hoai V
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