Semiconductor device having capacitor element

Details Semiconductor device having capacitor element Semiconductor device having capacitor element

2011-04-12

2011-04-12

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S295000, C257S306000, C257SE29343

Reexamination Certificate

active

07923816

ABSTRACT:
Provided is a semiconductor device which includes a capacitor element having a flat-plate-type lower electrode provided over a semiconductor substrate, a flat-plate-type TiN film provided over the lower electrode in parallel therewith, and a capacitor film provided between the lower electrode and the TiN film; and a first Cu plug brought into contact with the bottom surface of the lower electrode, and is composed of a metal material, wherein the capacitor film has a film which contains an organic molecule as a constituent.

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Chinese Patent Office issued a Chinese Office Action dated Mar. 15, 2010, Application No. 200810178821.9.

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