Semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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Details

C438S029000, C438S033000, C257SE33064

Reexamination Certificate

active

07947997

ABSTRACT:
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.

REFERENCES:
patent: 7183586 (2007-02-01), Ichihara et al.
patent: 2005/0199895 (2005-09-01), Seong et al.
patent: 2010/0124797 (2010-05-01), Lee
patent: 2006-203058 (2006-08-01), None
patent: 10-2002-0026619 (2002-04-01), None
patent: 10-2007-0081482 (2007-08-01), None
patent: 10-0812736 (2008-03-01), None

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