Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-05-24
2011-05-24
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C438S029000, C438S033000, C257SE33064
Reexamination Certificate
active
07947997
ABSTRACT:
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.
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patent: 2005/0199895 (2005-09-01), Seong et al.
patent: 2010/0124797 (2010-05-01), Lee
patent: 2006-203058 (2006-08-01), None
patent: 10-2002-0026619 (2002-04-01), None
patent: 10-2007-0081482 (2007-08-01), None
patent: 10-0812736 (2008-03-01), None
Birch & Stewart Kolasch & Birch, LLP
Dang Trung
LG Innotek Co. Ltd.
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