Lateral bipolar junction transistor with reduced base...

Details Lateral bipolar junction transistor with reduced base... Lateral bipolar junction transistor with reduced base...

2011-03-01

2011-03-01

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S378000, C257SE29187, C257SE29197, C257S558000

Reexamination Certificate

active

07897995

ABSTRACT:
A lateral bipolar junction transistor formed in a semiconductor substrate includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region having at least one open side and being disposed about a periphery of the base region; a shallow trench isolation (STI) region disposed about a periphery of the collector region; a base contact region disposed about a periphery of the STI region; and an extension region merging with the base contact region and laterally extending to the gate on the open side of the collector region.

REFERENCES:
patent: 5139961 (1992-08-01), Solheim et al.
patent: 5717241 (1998-02-01), Malhi et al.
patent: 2010/0252860 (2010-10-01), Yang

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