Semiconductor device with fuse and a method of manufacturing...

Details Semiconductor device with fuse and a method of manufacturing... Semiconductor device with fuse and a method of manufacturing...

2011-06-28

2011-06-28

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S637000, C257S642000, C257S643000

Reexamination Certificate

active

07968966

ABSTRACT:
In order to improve the reliability of a semiconductor device having a fuse formed by a Damascene technique, a barrier insulating film and an inter-layer insulating film are deposited over a fourth-layer wiring and a fuse. The barrier insulating film is an insulating film for preventing the diffusion of Cu and composed of a SiCN film deposited by plasma CVD like the underlying barrier insulating film. The thickness of the barrier insulating film covering the fuse is larger than the thickness of the underlying barrier insulating film so as to improve the moisture resistance of the fuse.

REFERENCES:
patent: 6111301 (2000-08-01), Stamper
patent: 6727590 (2004-04-01), Izumitani et al.
patent: 6812127 (2004-11-01), Oshima et al.
patent: 7602040 (2009-10-01), Hotta et al.
patent: 2004/0152334 (2004-08-01), Ohto et al.
patent: 2003-124307 (2003-04-01), None
patent: 2003-318262 (2003-11-01), None
patent: 2004-221275 (2004-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor device with fuse and a method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with fuse and a method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with fuse and a method of manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2656026