Method and apparatus for thinning a substrate

Details Method and apparatus for thinning a substrate Method and apparatus for thinning a substrate

2011-07-05

2011-07-05

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S008000, C438S459000, C438S695000

Reexamination Certificate

active

07972969

ABSTRACT:
A method is provided for controlling substrate thickness. At least one etchant is dispensed from at least one dispenser to a plurality of different locations on a surface of a spinning substrate to perform etching. A thickness of the spinning substrate is monitored at the plurality of locations, so that the thickness of the substrate is monitored at each individual location while dispensing the etchant at that location. A respective amount of etching performed at each individual location is controlled, based on the respective monitored thickness at that location.

REFERENCES:
patent: 5089305 (1992-02-01), Ushijima et al.
patent: 5268065 (1993-12-01), Grupen-Shemansky
patent: 5399229 (1995-03-01), Stefani et al.
patent: 5748296 (1998-05-01), Canteloup
patent: 6149759 (2000-11-01), Guggenberger
patent: 6383331 (2002-05-01), Sumnitsch
patent: 6494221 (2002-12-01), Sellmer et al.
patent: 6589855 (2003-07-01), Miyamoto et al.
patent: 2002/0153030 (2002-10-01), Chooi et al.
patent: 2004/0004724 (2004-01-01), Kim et al.
patent: 2007/0175500 (2007-08-01), Hohenwarter
patent: 2008/0315349 (2008-12-01), Takei et al.
patent: 1452018 (2003-10-01), None
Official Action issued on Jul. 19, 2010 in counterpart Chinese application.

Affiliated with

Also associated with

Rating

Method and apparatus for thinning a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for thinning a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for thinning a substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2655010