Silicon carbide semiconductor device including deep layer

Details Silicon carbide semiconductor device including deep layer Silicon carbide semiconductor device including deep layer

2011-08-09

2011-08-09

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S328000, C257S335000, C257SE21054, C257SE29069, C257SE29346

Reexamination Certificate

active

07994513

ABSTRACT:
A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench sandwiched by each of the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer located under the base region and extending to a depth deeper than the trench. The deep layer is formed into a lattice pattern.

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