Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-08-30
2011-08-30
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S079000, C257S080000, C257S085000, C257SE33064
Reexamination Certificate
active
08008651
ABSTRACT:
It is an object of the present invention to provide a light-emitting element having, between a pair of electrodes, a layer containing a light-emitting material and a transparent conductive film, wherein the electric erosion of the transparent conductive film and reflective metal can be prevented and to provide a light-emitting device using the light-emitting element. According to the present invention, a first layer102containing a light-emitting material, a second layer103containing an N-type semiconductor, a third layer104including a transparent conductive film, and a fourth layer105containing a hole-transporting medium are provided between an anode101and a cathode106, wherein the first layer102, the second layer103, the third layer104, the fourth layer105, and the cathode106are provided in order, and wherein the cathode has a layer containing reflective metal.
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Kumaki Daisuke
Seo Satoshi
Ho Anthony
Husch & Blackwell LLP
Lee Eugene
Semiconductor Energy Laboratory Co,. Ltd.
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