Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-04-19
2011-04-19
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
Reexamination Certificate
active
07928427
ABSTRACT:
The present invention is related to a semiconductor device with group III-V channel and group IV source-drain and a method for manufacturing the same. Particularly, the energy level density and doping concentration of group III-V materials are increased by the heteroepitaxy of group III-V and group IV materials and the structural design of elements. The method comprises: preparing a substrate; depositing a dummy gate material layer on the substrate and defining a dummy gate from the dummy gate material layer by photolithography; performing doping by self-aligned ion implantation using the dummy gate as a mask and performing activation at high temperature, so as to form source-drain; removing the dummy gate; forming a recess in the substrate between the source-drain pair by etching; forming a channel-containing stacked element in the recess by epitaxy; and forming a gate on the channel-containing stacked element.
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Zong-You Han et al., “Heteroepitaxy of SixGe1−x(×<5%) source/drain on GaAs substrates for the application of III-V MOSFETs”, 2009 International Conference on Solid State Devices and Materials (SSDM 2009), 4 pp.
Guang-Li Luo et al., “Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs”, Journal of Electrochemical Society, 157 (1) H27-H30 (2010), 4 pp.
Antonelli Terry Stout & Kraus LLP
Bui, Esq. Hung H.
National Chiao Tung University
Nguyen Dao H
Nguyen Tram H
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