Silicon-germanium-carbon semiconductor structure

Details Silicon-germanium-carbon semiconductor structure Silicon-germanium-carbon semiconductor structure

2011-08-16

2011-08-16

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S055000, C257S063000, C257S065000, C257SE21092, C257SE21102, C257SE21115, C257SE21145, C257SE21162, C257SE31042, C257SE31044, C257SE31048, C257SE31049, C257SE31060

Reexamination Certificate

active

07999250

ABSTRACT:
In accordance with one or more embodiments, a semiconductor structure includes a semiconductor substrate, a first semiconductor material over the semiconductor substrate, and a second semiconductor material over a portion the first semiconductor material, wherein the second semiconductor material comprises silicon-germanium-carbon (SiGeC) and wherein the first semiconductor material is a silicon epitaxial layer. The semiconductor structure further includes an active device, wherein a portion of the active device is formed in the second semiconductor material and a dielectric structure extending from the first surface of the first semiconductor material into the semiconductor substrate through the first semiconductor material.

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