Light emitter device

Details Light emitter device Light emitter device

2011-07-12

2011-07-12

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S079000, C257S081000, C257S103000, C438S022000, C438S048000, C438S052000

Reexamination Certificate

active

07977687

ABSTRACT:
A light emitting device (LED) structure formed on a Group IV-based semiconductor substrate is provided. The LED structure includes a Group IV-based substrate, an AlN nucleation layer formed on the Group IV-based substrate, a GaN epitaxial layer formed on the AlN nucleation layer, a distributed Bragg reflector (DBR) multi-layer structure formed on the epitaxial layer, and an LED active layer formed on the DBR multi-layer structure.

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