Semiconductor laser having fundamental lateral mode selectivity

Details Semiconductor laser having fundamental lateral mode selectivity Semiconductor laser having fundamental lateral mode selectivity

1977-02-22

1978-07-11

Miller, Jr., Stanley D.

Oscillators

Molecular or particle resonant type

357 18, H01S 319

Patent

active

041005082

ABSTRACT:
A semiconductor laser having opposed end surfaces with an optical reflective means on the surface of at least one end surface has fundamental lateral mode selectivity. The laser has an optical waveguide that extends from one end surface to the other. The optical reflective means may be an electrical insulation layer on the end surface with a reflective stripe on the insulation layer and having a width in the lateral direction less than that of the spatial width of the fundamental lateral mode in the absence of the reflective stripe. Alternatively, the selectivity means can be an antireflection layer on the end surface with a stripe opening in the antireflection layer having a width in the lateral direction less than that of the spatial width of the fundamental lateral mode in the absence of the antireflection layer. The opening in the antireflection layer is formed by placing a wire close to the end surface and evaporating the antireflection material onto the end surface. The wire prevents the material from being deposited onto the end surface under the wire thereby forming the opening. Both the reflection stripe and stripe opening are positioned on that portion of the optical waveguide at the end surface having substantially the highest optical radiation intensity.

REFERENCES:
patent: 3701047 (1972-10-01), Caplan et al.
patent: 3849738 (1974-11-01), Hakki
patent: 3866238 (1975-02-01), Monroe
patent: 4001719 (1977-01-01), Krupka

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