Semiconductor memory device which includes memory cell...

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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Details

C365S185170, C365S185180, C365S185230, C365S189110, C365S230060

Reexamination Certificate

active

07898851

ABSTRACT:
A semiconductor memory device includes a memory cell unit, word lines, a driver circuit, and a voltage generator. In the memory cell unit, memory cells having a charge accumulation layer and a control gate are connected in series. The word lines are connected to the control gates. The driver circuit selects the word lines. The voltage generator generates a first voltage and a second voltage lower than the first voltage. The first voltage is used by the first driver circuit to transfer a voltage to the unselected word line. The second voltage is used by circuits other than the first driver circuit.

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