Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-03-01
2011-03-01
Phan, Trong (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185170, C365S185180, C365S185230, C365S189110, C365S230060
Reexamination Certificate
active
07898851
ABSTRACT:
A semiconductor memory device includes a memory cell unit, word lines, a driver circuit, and a voltage generator. In the memory cell unit, memory cells having a charge accumulation layer and a control gate are connected in series. The word lines are connected to the control gates. The driver circuit selects the word lines. The voltage generator generates a first voltage and a second voltage lower than the first voltage. The first voltage is used by the first driver circuit to transfer a voltage to the unselected word line. The second voltage is used by circuits other than the first driver circuit.
REFERENCES:
patent: 5706241 (1998-01-01), Nakamura et al.
patent: 6026047 (2000-02-01), Ryu et al.
patent: 6075723 (2000-06-01), Naiki et al.
patent: 6212095 (2001-04-01), Chevallier
patent: 6774704 (2004-08-01), Kushnarenko
patent: 6853029 (2005-02-01), Ichige
patent: 7009881 (2006-03-01), Noguchi
patent: 7045423 (2006-05-01), Ichige
patent: 7224616 (2007-05-01), Kim et al.
patent: 7339828 (2008-03-01), Hasegawa et al.
patent: 7477543 (2009-01-01), Choi
patent: 7505355 (2009-03-01), Kanda
patent: 7518921 (2009-04-01), Maejima et al.
patent: 7630242 (2009-12-01), Taito et al.
patent: 7630244 (2009-12-01), Lee
patent: 7636259 (2009-12-01), McLaury et al.
patent: 7639540 (2009-12-01), Kim et al.
patent: 7643340 (2010-01-01), Kong et al.
patent: 7643358 (2010-01-01), Nakagawa et al.
patent: 7652928 (2010-01-01), Yanagidaira et al.
patent: 2003-86720 (2003-03-01), None
patent: 2006-114139 (2006-04-01), None
Hamada Makoto
Maejima Hiroshi
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Phan Trong
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