Semiconductor devices and manufacturing method thereof

Details Semiconductor devices and manufacturing method thereof Semiconductor devices and manufacturing method thereof

2011-02-01

2011-02-01

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Forming schottky junction

Combined with formation of ohmic contact to semiconductor...

C257S077000, C257SE21054, C257SE21065, C438S582000, C438S583000, C438S586000, C438S597000, C438S931000

Reexamination Certificate

active

07879705

ABSTRACT:
A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form Al3Ti, and the second temperature is the minimum temperature of a temperature zone at which the Al3Ti reacts with SiC to form Ti3SiC2. As a result of this maintaining of temperature step, an Al3Ti-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the Al3Ti-layer to a temperature that is higher than the second temperature. As a result of this step of further heating the SiC substrate reacts with Al3Ti of the Al3Ti-layer to form a Ti3SiC2-layer on the surface of the SiC substrate.

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