Sense amplifier for low-supply-voltage nonvolatile memory cells

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185200, C365S185210, C365S210100, C365S210150

Reexamination Certificate

active

07885116

ABSTRACT:
A sense amplifier for nonvolatile memory cells includes a reference cell, a first load, connected to the reference cell, and a second load, connectable to a nonvolatile memory cell, both the first load and the second load having controllable resistance; a control circuit of the first load and of the second load supplies the first load and the second load with a control voltage irrespective of an operating voltage between a first conduction terminal and a second conduction terminal of the first load.

REFERENCES:
patent: 4648074 (1987-03-01), Pollachek
patent: 5717640 (1998-02-01), Hashimoto
patent: 5859798 (1999-01-01), Yero
patent: 5909405 (1999-06-01), Lee et al.
patent: 5973959 (1999-10-01), Gerna et al.
patent: 6097633 (2000-08-01), La Placa
patent: 6320808 (2001-11-01), Conte et al.
patent: 6445616 (2002-09-01), Kim
patent: 6532174 (2003-03-01), Homma et al.
patent: 6535428 (2003-03-01), Pasotti et al.
patent: 6621729 (2003-09-01), Garni et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Sense amplifier for low-supply-voltage nonvolatile memory cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sense amplifier for low-supply-voltage nonvolatile memory cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sense amplifier for low-supply-voltage nonvolatile memory cells will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2647182

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.