Femtosecond laser-induced formation of submicrometer spikes...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor

Reexamination Certificate

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C257S623000, C257SE29106, C257SE29108

Reexamination Certificate

active

07884446

ABSTRACT:
The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

REFERENCES:
patent: 4181538 (1980-01-01), Narayan et al.
patent: 4201450 (1980-05-01), Trapani
patent: 4277793 (1981-07-01), Webb
patent: 4703996 (1987-11-01), Glass et al.
patent: 4965784 (1990-10-01), Land et al.
patent: 5635089 (1997-06-01), Singh et al.
patent: 5714404 (1998-02-01), Mitlitsky et al.
patent: 5773820 (1998-06-01), Osajda et al.
patent: 6242291 (2001-06-01), Kusumoto et al.
patent: 6272768 (2001-08-01), Danese
patent: 6457478 (2002-10-01), Danese
patent: 6486046 (2002-11-01), Fujimura et al.
patent: 6876003 (2005-04-01), Nakamura et al.
patent: 7057256 (2006-06-01), Carey, III et al.
patent: 7112545 (2006-09-01), Railkar et al.
patent: 7211214 (2007-05-01), Chou
patent: 7390689 (2008-06-01), Mazur et al.
patent: 7442629 (2008-10-01), Mazur et al.
patent: 7586601 (2009-09-01), Ebstein
patent: 2002/0034845 (2002-03-01), Fujimura et al.
patent: 2002/0126333 (2002-09-01), Hosono et al.
patent: 2002/0176650 (2002-11-01), Zhao et al.
patent: 2003/0025156 (2003-02-01), Yamazaki et al.
patent: 2003/0029495 (2003-02-01), Mazur et al.
patent: 2003/0132449 (2003-07-01), Hosono et al.
patent: 2005/0032249 (2005-02-01), Im et al.
patent: 2005/0127401 (2005-06-01), Mazur et al.
patent: 2006/0102901 (2006-05-01), Im et al.
patent: 2010/0171948 (2010-07-01), Mazur et al.
Carey et al., “High Sensitivity Silicon-Based VIS/NIR Photodetectors”, CLEO 2004 (San Francisco, CA, 2004) 1-2.
Carey et al., “Femtosecond Laser-Assisted Microstructuring of Silicon for Novel Detector, Sensing and Display Technologies”, LEOS Oct. 26, 2003 (Tuscon, AR, 2003) 481-482.
Carey et al., “Femtosecond Laser-Assisted Microstructuring of Silicon for Novel Detector, Sensing and Display Technologies”, LEOS 2002 (Glasgow, Scotland, 2002) 97-98.
Carey et al., “Femtosecond-Laser-Assisted Microstructuring of Silicon Surfaces”,Optics and Photonics News, 14, 32-36 (2003).
Crouch et al., “Infrared Absorption by Sulfur-Doped Silicon Formed by Femtosecond Laser Irradiation”,Appl. Phys. A, 79, 1635-1641 (2004).
Crouch et al., “Comparison of Structure and Properties of Femtosecond and Nanosecond Laser-Structured Silicon”,Appl. Phys. Lett.,84, 1850-1852 (2004).
Dolgaev et al., “Formation of Conical Microstructures Upon Laser Evaporation of Solids”,Appl. Phys. A, 73, 177-181 (2001).
Fowlkes et al., “Surface Microstructuring and Long-Range Ordering of Silicon Nanoparticles”,Appl. Phys. Lett.,80 (20), 3799-3801 (2002).
Her et al., “Novel Conical Microstructures Created in Silicon With Femtosecond Laser Pulses”, CLEO 1998 (San Francisco, CA 1998) 511-512.
Hu et al., “Solar Cells from Basic to Advanced Systems,” McGraw Hill Book Co., NY 1983, p. 39.
Pedraza et al., “Surface Nanostructuring of Silicon”,Appl. Phys. A, 77, 277-284 (2003).
Pedraza et al., “Silicon Microcolumn Arrays Grown by Nanosecond Pulsed-Excimer Laser Irradiation”,Appl. Phys. Lett.,74 (16), 2322-2324 (1999).
Sánchez et al., “Dynamics of the Hydrodynamical Growth of Columns on Silicon Exposed to ArF Excimer-Laser Irradiation”,Appl. Phys. A, 66, 83-86 (1998).
Sánchez et al., “Whiskerlike Structure Growth on Silicon Exposed to ArF Excimer Laser Irradiation”,Appl. Phys. Lett.,69 (5), 620-622 (1996).
Serpengüzel et al., “Temperature Dependence of Photoluminescence in Non-Crystalline Silicon”, Photonics West (San Jose, CA, 2004) 454-462.
Shen et al., “Formation of Regular Arrays of Silicon Microspikes by Femtosecond Laser Irradiation Through a Mask”,Appl. Phys. Lett.,82, 1715-1717 (2003).
Solar Energy Research Institute, “Basic Photovoltaic Principles and Methods,” Van Nostrand Reinhold Co., NY 1984, pp. 45-47 and 138-142.
Younkin et al., “Infrared Absorption by Conical Silicon Microstructures Made in a Variety of Background Gases Using Femtosecond-Laser Pulses”,J. Appl. Phys.,93, 2626-2629 (2003).
Wu et al., “Visible Luminescence From Silicon Surfaces Microstructured in Air”,Appl. Phys. Lett.,81, 1999-2001 (2002).
Wu, C. et al., “Black Silicon a New Light Absorber,”APS Centennial Meeting(Mar. 23, 1999).
Carey, et al., “Fabrication of Micrometer-Sized Conical Field Emitters Using Femto-second Laser-Assisted Etching of Silicon,” Proc. IVMC 2001(Davis, CA 2001) 75-76 (2001).
Carey et al., “Field emission from Silicon Microstructures Formed by Femtosecond Laser Assisted Etching,” Proc. CLEO 2001 (Baltimore, MD 2001) 555-557.
Carey et al., “High Sensitivity Silicon-Based VIS/NIR Photodetectors”, Optical Society of America 2003.
Carey et al., “Femtosecond Laser-Assisted Microstructuring of Silicon for Novel Detector, Sensing and Display Technologies”, LEOS Oct. 26, 2003 (Tuscon, AR, 2003) 481-482.
Carey et al., “Femtosecond Laser-Assisted Microstructuring of Silicon for Novel Detector, Sensing and Display Technologies”, LEOS 2002 (Glasgow, Scotland, 2002) 97-98.
Carey et al., “Femtosecond-Laser-Assisted Microstructuring of Silicon Surfaces”, Optics and Photonics News, 14, 32-36 (2003).
Crouch et al., “Infrared Absorption by Sulfur-Doped Silicon Formed by Femtosecond Laser Irradiation”, Appl. Phys. A, 79, 1635-1641 (2004).
Crouch et al., “Comparison of Structure and Properties of Femtosecond and Nanosecond Laser-Structured Silicon”, Appl. Phys. Lett., 84, 1850-1852 (2004).
Dolgaev et al., “Formation of Conical Microstructures Upon Laser Evaporation of Solids”, Appl. Phys. A, 73, 177-181 (2001).
Fowlkes et al., “Surface Microstructuring and Long-Range Ordering of Silicon Nanoparticles”, Appl. Phys. Lett., 80 (20), 3799-3801 (2002).
Her et al., “Novel Conical Microstructures Created in Silicon With Femtosecond Laser Pulses”, CLEO 1998 (San Francisco, CA 1998) 511-512.
Hu et al., “Solar Cells from Basic to Advanced Systems,” McGraw Hill Book Co., NY 1983, p. 39.
Pedraza et al., “Surface Nonstructuring of Silicon”, Appl Phys. A, 77, 277-284 (2003).
Pedraza et al., “Silicon Microcolumn Arrays Grown by Nanosecond Pulsed-Excimer Laser Irradiation”, Appl. Phys. Lett., 74 (16), 2322-2324 (1999).
Sanchez et al., “Dynamics of the Hydrodynamical Growth of Columns on Silicon Exposed to ArF Excimer-Laser Irradiation”, Appl. Phys. A, 66, 83-86 (1998).
Sanchez et al., “Whiskerlike Structure Growth on Silicon Exposed to Arf Excimer Laser Irradiation”, Appl. Phys. Lett., 69 (5), 620-622 (1996).
Serpenguzel et al., “Temperature Dependence of Photoluminescence in Non-Crystalline Silicon”, Photonics West (San Jose, CA 2004) 454-462.
Shen et al., “Formation of Regular Arrays of Silicon Microspikes by Femtosecond Laser Irradiation Through a Mask”, Appl. Phys. Lett., 82, 1715-1717 (2003).
Solar Energy Research Institute, “Basic Photovoltaic Principles and Methods,” Van Nostrand Reinhold Co., NY 1984, pp. 45-47 and 138-142.
Younkin et al., “Infrared Absorption by Conical Silicon Microstructures Made in a Variety of Background Gases Using Femtosecond-Laser Pulses”, J. Appl. Phys., 93, 2626-2629 (2003).
Wu et al. “Visible Luminescence From Silicon Surfaces Microstructured in Air”, Appl Phys. Lett., 81, 1999-2001 (2002).
Wu, C. et al., “

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