Method of operating non-volatile memory cell and memory...

Details Method of operating non-volatile memory cell and memory... Method of operating non-volatile memory cell and memory...

2011-07-26

2011-07-26

Dinh, Son T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S185290

Reexamination Certificate

active

07986558

ABSTRACT:
A method of operating a non-volatile memory cell is described, including pre-erasing the cell through double-side biased (DSB) injection of a first type of carrier and programming the cell through Fowler-Nordheim (FN) tunneling of a second type of carrier.

REFERENCES:
patent: 6483752 (2002-11-01), Hirano
patent: 2003/0103381 (2003-06-01), Han et al.
patent: 2003/0218913 (2003-11-01), Le et al.

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