Non-volatile semiconductor memory featuring effective cell area

Details Non-volatile semiconductor memory featuring effective cell area Non-volatile semiconductor memory featuring effective cell area

1999-03-16

2000-05-16

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular connection

365 63, 36518511, 36518513, G11C 1600

Patent

active

06064592&

ABSTRACT:
In order to achieve effective reduction of memory cell area in a contactless type non-volatile memory, the main bit lines ran zigzag in the column direction connecting the buried local bit lines in two adjacent columns of memory cell blocks alternately. This permits the number of main bit lines to be half, thereby reducing the pitch of the main bit lines with the result of reducing the memory cell area.

REFERENCES:
patent: 5526307 (1996-06-01), Yiu et al.
patent: 5583808 (1996-12-01), Brahmbhatt
patent: 5691938 (1997-11-01), Yiu et al.
patent: 5777922 (1998-07-01), Choi et al.
patent: 5825688 (1998-10-01), Ueki
patent: 5969977 (1999-10-01), Camerlenghi et al.

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