Method of fabricating halftone phase shift mask

Details Method of fabricating halftone phase shift mask Method of fabricating halftone phase shift mask

2011-05-24

2011-05-24

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000, C430S394000

Reexamination Certificate

active

07947414

ABSTRACT:
A method of fabricating a halftone phase shift mask is disclosed, by which a process time and a failure ratio can be reduced by sequentially forming a phase shift layer a first photoresist, a metal layer and a second photoresist over a transparent substrate, performing a process to expose a portion of the metal layer, and then performing an etching process to expose a portion of the substrate using the second photoresist as a mask, and then performing an electron-beam exposure process on a portion of the first photoresist such that electrons contact the surface of the transparent substrate, and then simultaneously developing a portion of the first photoresist and removing a portion of the metal layer and a remaining portion of the first photoresist to expose a portion of the phase shift layer.

REFERENCES:
patent: 6110624 (2000-08-01), Hibbs et al.
patent: 2007/0207391 (2007-09-01), Lee et al.
patent: 2007/0231715 (2007-10-01), Han et al.

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