Interconnect structures for integration of multi-layered...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE23152, C257SE23175, C438S640000, C438S666000

Reexamination Certificate

active

07928577

ABSTRACT:
Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material. Methods of forming semiconductor devices comprising at least one interconnect structure are also disclosed.

REFERENCES:
patent: 5355023 (1994-10-01), Tomioka et al.
patent: 5726098 (1998-03-01), Tsuboi
patent: 6001717 (1999-12-01), Lien
patent: 6022804 (2000-02-01), Yano et al.
patent: 6180514 (2001-01-01), Yeh et al.
patent: 6187678 (2001-02-01), Gaynes et al.
patent: 6221769 (2001-04-01), Dhong et al.
patent: 6245664 (2001-06-01), Miyai
patent: 6316368 (2001-11-01), Lin et al.
patent: 6400024 (2002-06-01), Drury et al.
patent: 6486549 (2002-11-01), Chiang
patent: 6716746 (2004-04-01), Kim et al.
patent: 6767616 (2004-07-01), Ooi et al.
patent: 7208410 (2007-04-01), Larson
patent: 7211510 (2007-05-01), Meadows
patent: 7300857 (2007-11-01), Akram et al.
patent: 7312400 (2007-12-01), Ito et al.
patent: 7564135 (2009-07-01), Park
patent: 2003/0015796 (2003-01-01), Hasunuma
patent: 2005/0051353 (2005-03-01), Chong et al.
patent: 2007/0232059 (2007-10-01), Abe
patent: 2007/0271783 (2007-11-01), Ikeda
patent: 2009/0051039 (2009-02-01), Kuo et al.
patent: 2009/0146283 (2009-06-01), Chen et al.
Topol et al., Three-Dimensional Integrated Circuits, IBM Journal of Research and Development, Advanced Silicon Technology, vol. 50, No. 4/5, 2006.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Interconnect structures for integration of multi-layered... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Interconnect structures for integration of multi-layered..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interconnect structures for integration of multi-layered... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2640121

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.