Simplified planarization process for polysilicon filled trenches

Details Simplified planarization process for polysilicon filled trenches Simplified planarization process for polysilicon filled trenches

1984-06-27

1985-11-26

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29576B, 148 15, 148187, 148188, 148DIG50, 156628, 156643, 357 49, 357 55, 357 59, H01L 2122, H01L 21302, H01L 2176

Patent

active

045547289

ABSTRACT:
The method of planarizing polysilicon-filled trenches involves first filling the trenches with an undoped polysilicon until the upper surface is substantially planar. The polycrystalline silicon is then heavily doped by means of diffusion of a dopant from the upper surface. The time and temperature of the diffusion are carefully controlled providing for the dopant to penetrate the polysilicon to a depth level with the tops of the trenches. A selective etchant is then utilized which removes the heavily doped polysilicon and leaves the undoped polysilicon untouched in the trenches.

REFERENCES:
patent: 3892608 (1975-07-01), Kuhn
patent: 3969168 (1976-07-01), Kuhn
patent: 4108715 (1978-08-01), Ishikawa et al.
patent: 4233091 (1980-11-01), Kawabe
patent: 4377734 (1983-03-01), Mashiko et al.
patent: 4391033 (1983-07-01), Shinozaki
patent: 4438556 (1984-03-01), Komatsu et al.
patent: 4455740 (1984-06-01), Iwai
patent: 4472240 (1984-09-01), Kameyama

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