Semiconductor structure and method of making the same

Details Semiconductor structure and method of making the same Semiconductor structure and method of making the same

2011-07-19

2011-07-19

Trinh, Hoa B (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23141

Reexamination Certificate

active

07982315

ABSTRACT:
A semiconductor device is provided. An amorphous silicon layer that acts as a UV blocking layer replaces a conventional silicon-rich oxide (SRO) layer or the super silicon-rich oxide (SSRO) layer. By doing this, the process window is increased. In addition, silicon nitride sidewall spacer is formed inside the contact hole to prevent charge loss.

REFERENCES:
patent: 6693002 (2004-02-01), Nakamura et al.
patent: 7132369 (2006-11-01), Delgadino et al.
patent: 2007/0108509 (2007-05-01), Hashidzume et al.
patent: 1423323 (2003-06-01), None

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