Apparatus and method for surface modification using charged...

Radiant energy – Electrically neutral molecular or atomic beam devices and...

Reexamination Certificate

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C250S492100, C250S492200, C250S492210

Reexamination Certificate

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07893397

ABSTRACT:
An apparatus and method for using high beam currents in FIB circuit edit operations, without the generation of electrostatic discharge events. An internal partial chamber is disposed over the circuit to be worked on by the FIB. The partial chamber has top and bottom apertures for allowing the ion beam to pass through, and receives a gas through a gas delivery nozzle. A non-reactive gas, or a combination of a non-reactive gas and a reactive gas, is added to the FIB chamber via the partial chamber, until the chamber reaches a predetermined pressure. At the predetermined pressure, the gas pressure in the partial chamber will be much greater than that of the chamber, and will be sufficiently high such that the gas molecules will neutralize charging induced by the beam passing through the partial chamber.

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patent: 6042738 (2000-03-01), Casey, Jr. et al.
PCT Patent Application No. PCT/CA2006/001815 International Preliminary Report on Patentability dated May 15, 2008.
Valery, “Gas delivery and virtual process chamber concept for gas-assisted material processing in a focussed ion beam system”, Journal of Vacuum Science and Technology, 48th International Conference, EIPBN Nov./Dec. 2004, pp. 3008-3011.
Harriott, “A second generation focused ion beam micromachining system”, Proceedings of the SPIE—The International Society of Optical Engineering, vol. 773, Jun. 1987, pp. 190-194.
PCT Patent Application No. PCT/CA2006/001815, International Search Report dated Feb. 12, 2007.

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