Semiconductor device and method for fabricating...

Details Semiconductor device and method for fabricating... Semiconductor device and method for fabricating...

2011-05-17

2011-05-17

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE21495, C257SE23141, C438S622000

Reexamination Certificate

active

07944054

ABSTRACT:
A semiconductor device includes a plurality of first group wiring layers laminated on a substrate, and each of the first group wiring layers having a wire formed with a first minimum wire width and a main dielectric film portion; and a plurality of second group wiring layers laminated on a top layer of the plurality of first group wiring layers and each of the second group wiring layers having a wire formed with a second minimum wire width greater than the first minimum wire width and a main dielectric film portion, wherein a main dielectric film portion in a bottom layer of the plurality of second group wiring layers has a relative dielectric constant which is substantially identical to a relative dielectric constant of main dielectric film portions of the other second group wiring layers, and Young's modulus of the main dielectric film portion in the bottom layer of the plurality of second group wiring layers is smaller than those of the main dielectric film portions of the other second group wiring layers and larger than those of main dielectric film portions of the first group wiring layers.

REFERENCES:
patent: 6534870 (2003-03-01), Shimooka et al.
patent: 6949830 (2005-09-01), Owada et al.
patent: 7183200 (2007-02-01), Inoue
patent: 7186613 (2007-03-01), Kirner et al.
patent: 7250679 (2007-07-01), Otsuka
patent: 2006/0087041 (2006-04-01), Fukuyama et al.
patent: 2006/0103017 (2006-05-01), Usui et al.
patent: 2006/0192286 (2006-08-01), Kanamura
patent: 2007/0187828 (2007-08-01), Farooq et al.
patent: 2008/0308939 (2008-12-01), Matsunaga
patent: 2000-357737 (2000-12-01), None
patent: 2006-216746 (2006-08-01), None

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