Semiconductor storage device and method of manufacturing same

Details Semiconductor storage device and method of manufacturing same Semiconductor storage device and method of manufacturing same

2011-03-15

2011-03-15

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185260, C365S185010

Reexamination Certificate

active

07907451

ABSTRACT:
The disclosure of this application enhances the data writing speed of an electrically erasable and writable semiconductor memory. In a semiconductor storage device of this application, at a time of writing data, when a positive voltage lower than a voltage at control gate30is applied to potential control gate28formed inside tunnel oxide film360between p channel22of a transistor and floating gate32, a potential barrier between p channel22of the transistor and floating gate32is lowered, and a time required for storing an electron in floating gate30is reduced. After data is stored, when 0 V or a negative voltage is applied to the potential control gate, a potential barrier for an electron moving from the floating gate to the channel of the transistor increases, thereby preventing erasure of data.

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