Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-04-12
2011-04-12
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000
Reexamination Certificate
active
07923711
ABSTRACT:
The present invention provides switching elements having a readout margin suitable for data storage units of nonvolatile memories, which are obtained by improving the resistance ratio of metal oxide thin films having reversible variable resistance properties. The present invention provides switching elements having a metal oxide consisting of a transition metal and oxygen formed between a first electrode and a second electrode, by modifying one or more of the crystal structure, ionic valence number of metal element, and nonstoichiometricity of a stoichiometric compound consisted of the transition metal and oxygen. The present invention also provides methods for producing switching elements having reversible variable resistance characteristics due to electric power application history.
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patent: 2007/0117256 (2007-05-01), Stewart et al.
patent: 2010/0012911 (2010-01-01), Akinaga et al.
patent: 2004-363604 (2004-12-01), None
Akinaga et al., “Resistive Switching Effect in Metal/Insulator/Metal Heterostructures and Its Application for Non-volatile Memory”,Institute of Electrical Engineers of Japan, 2 (4), pp. 453-457, Jul. 2007.
Baek et al., “Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses”,IEEE, 2004.
Gibbons et al., “Switching Properties of Thin NiO Films”,Solid-State Electronics, vol. 7, pp. 785-797, 1964.
Hosoi et al., “High Speed Unipolar Switching Resistance RAM (RRAM) Technology”,IEEE, 30.7.1, 2006.
Kim et al., “Electrical observations of filamentary conductions for the resistive memory switching in NiO films”,Applied Physics Letters, vol. 88, pp. 202102-1-202102-3, 2006.
Liu et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”,Applied Physics Letters, vol. 76, No. 19, pp. 2749-2751, May 8, 2000.
Muramatsu et al., “Crystallographic and Resistance Switching Properties of TiOxThin Films Annealed under Oxygen Radial Atmosphere”,The 54thSpring Meeting, 2007, The Japan Society of Applied Physics, p. 673, 2007.
Seo et al., “Reproducible resistance switching in polycrystalline NiO films”,Applied Physics Letters, vol. 85, No. 23, pp. 5655-5657, Dec. 6, 2004.
Shima et al., “Large electrical resistance change in Pt/CuOx/Pt trilayer”,The 67thAutumn Meeting, 2006, The Japan Society of Applied Physics, p. 578, 2006.
Shima et al., “Resistance switching and asymmetric electrical properties in Ti oxide synthesized by reactive sputtering”,The 54thSpring Meeting, 2007, The Japan Society of Applied Physics, p. 674, 2007.
Shima et al., “Resistance switching and voltage polarity dependent forming process in Co oxide”,The 68thAutumn Meeting, 2007, The Japan Society of Applied Physics, p. 648, 2007.
Shima et al., “Reproducible Resistance Switching in Ni/Nio/Ni Trilayer”,MRS Spring Meeting, p. 181, 2007.
Shima et al., “Synthesis and Characterization of Pt/Co-O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching”,Japanes Journal of Applied Physics, vol. 46, No. 3, pp. L57-L60, 2007.
Shima et al., “Resistance switching in the metal deficient-type oxides: NiO and CoO”,Applied Physics Letters 91, pp. 012901-1-012901-3, 2007.
Takano et al., “Dry etching process of Tioxfilm—Application to fabrication of ReRAM device”,The Ninth International Symposium on Sputtering and Plasma Processes(ISSP 2007), pp. 160-162, 2007.
Takano et al., “Reactive Ion Etching of Transition-Metal Oxides”,The 24thSymposium on Plasma Processing(SPP-24), pp. 145-146, 2007.
Tomita et al., “Nonvolatile resistance memory effect on W/CuO/Pt structure”,The 67thAutumn Meeting, 2006, The Japan Society of Applied Physics, p. 573, 2006.
Tomita et al., “Nonvolatile resistive memory effect and rectification on Pt/Tiox/Pt structure”,The 54thSpring Meeting, 2007, The Japan Society of Applied Physics, p. 684, 2007.
Yasuda et al., “Nonvolatile resistive memory characteristics in metal/binary transition metal oxdis”,The 53thSpring Meeting, 2006, The Japan Society of Applied Physics, p. 642, 2006.
H. Akinaga et al., “Resistive Switching Effect in Metal/Insulator/Metal Heterostructures and Its Application for Non-volatile Memory”,Institute of Electrical Engineers of Japan, 2 (4): 453-7, Jul. 2007.
I. G. Baek et al., “Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses”,IEEE, 2004.
J. F. Gibbons et al., “Switching Properties of Thin NiO Films”,Solid-State Electronics, vol. 7, pp. 785-595, 1964.
Y. Hosoi et al., “High Speed Unipolar Switching Resistance RAM (RRAM) Technology”,IEEE, 30.7.1, 2006.
D. C. Kim, et al., “Electrical observations of filamentary conductions for the resistive memory switching in NiO films”,Applied Physics Letters, vol. 88, 2006.
S. Q. Liu, et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”,Applied Physics Letters, vol. 76, No. 19, May 8, 2000.
H. Muramatsu, et al., “Crystallographic and Resistance Switching Properties of TiOxThin Films Annealed under Oxygen Radial Atmosphere”,The 54thSpring Meeting, 2007, The Japan Society of Applied Physics, p. 673 , 2007.
S. Seo, et al., “Reproducible resistance switching in polycrystalline NiO films”,Applied Physics Letters, vol. 85, No. 23, Dec. 6, 2004.
H. Shima, et al., “Large electrical resistance change in Pt/CuOx/Pt trilayer”,The 67thAutumn Meeting, 2006, The Japan Society of Applied Physics, p. 673, 2006.
H. Shima, et al., “Resistance switching and asymmetric electrical properties in Ti oxide synthesized by reactive sputtering”,The 54thSpring Meeting, 2007, The Japan Society of Applied Physics, p. 674, 2007.
H. Shima, et al., “Resistance switching and voltage polarity dependent forming process in Co oxide”,The 68thAutumn Meeting, 2007, The Japan Society of Applied Physics, p. 648, 2007.
H. Shima, et al., “Reproducible Resistance Switching in Ni/Nio/Ni Trilayer”,MRS Spring Meeting, p. 181, 2007.
H. Shima, et al., “Synthesis and Characterization of Pt/Co-O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching”,Japanes Journal of Applied Physics, vol. 46, No. 3, p. L57-L60, 2007.
H. Shima, et al., “Resistance switching in the metal deficient-type oxides: NiO and CoO”,Applied Physics Letters 91, 2007.
F. Takano, et al., “Dry etching process of Tioxfilm—Application to fabrication of ReRAM device”,The Ninth International Symposium on Sputtering and Plasma Processes(ISSP 2007), p. 160-162, 2007.
F. Takano, et al., “Reactive Ion Etching of Transition-Metal Oxides”,The 24thSymposium on Plasma Processing(SPP-24), p. 145-146, 2007.
H. Tomita, et al., “Nonvolatile resistance memory effect on W/CuO/Pt structure”,The 67thAutumn Meeting, 2006, The Japan Society of Applied Physics, p. 573, 2006.
H. Tomita, et al., “Nonvolatile resistive memory effect and rectification on Pt/Tiox/Pt structure”,The 54thSpring Meeting, 2007, The Japan Society of Applied Physics, p. 684, 2007.
S. Yasuda, et al., “Nonvolatile resistive memory characteristics in metal/binary transition metal oxdis”,The 53thSpring Meeting, 2006, The Japan Society of Applied Physics, p. 642, 2006.
Akinaga Hiroyuki
Shima Hisashi
Takano Fumiyoshi
Tamai Yukio
Hamilton Brook Smith & Reynolds P.C.
National Institute of Advanced Industrial Science and Technology
Nguyen Cuong Q
Sharp Corporation
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