Semiconductor ESD device and method of making same

Details Semiconductor ESD device and method of making same Semiconductor ESD device and method of making same

2011-07-26

2011-07-26

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S107000, C257SE27018, C257SE29211, C361S056000, C361S101000

Reexamination Certificate

active

07985983

ABSTRACT:
A semiconductor device includes an ESD device region disposed within a semiconductor body of a first semiconductor type, an isolation region surrounding the ESD device region, a first doped region of a second conductivity type disposed at a surface of the semiconductor body within the ESD region, and a second doped region of the first conductivity type disposed between the semiconductor body within the ESD region and at least a portion of the first doped region, where the doping concentration of the second doped region is higher than the semiconductor body. A third doped region of the second semiconductor type is disposed on the semiconductor body and a fourth region of the first conductivity type is disposed over the third doped region. A fifth doped region of the second conductivity type is disposed on the semiconductor body. A trigger device and an SCR is formed therefrom.

REFERENCES:
patent: 5274262 (1993-12-01), Avery
patent: 5343053 (1994-08-01), Avery
patent: 5374565 (1994-12-01), Hsue et al.
patent: 5982601 (1999-11-01), Lin
patent: 6759691 (2004-07-01), Chen
patent: 6791122 (2004-09-01), Avery et al.
patent: 7538997 (2009-05-01), Mallikararjunaswamy
patent: 2002/0041007 (2002-04-01), Russ
patent: 2002/0053704 (2002-05-01), Avery et al.
patent: 2004/0240130 (2004-12-01), Kitagawa
patent: 2005/0195540 (2005-09-01), Streibl et al.
patent: 2006/0097321 (2006-05-01), Kim
patent: 2006/0151836 (2006-07-01), Salcedo et al.
patent: 2006/0152868 (2006-07-01), Ker et al.
patent: 2006/0267044 (2006-11-01), Yang
patent: 2007/0023866 (2007-02-01), Chatty et al.
patent: 2007/0085142 (2007-04-01), Manna et al.
patent: 1 294 025 (2003-03-01), None
Mergens, M. et al., “Advanced SCR ESD Protection Circuits for CMOS/SOI Nanotechnologies,” IEEE 2005 Custom Integrated Circuits Conference, 2005, pp. 481-488.
Mergens, M., et al., “Speed Optimized Diode-Triggered SCR (DTSCR) for RF ESD Protection of Ultra-Sensitive IC Nodes in Advanced Technologies,” IEEE Transactions on Device and Materials Reliability, Sep. 2005, pp. 532-542, vol. 5, No. 3.

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