Semiconductor laser whose active layer has an ordered structure

Details Semiconductor laser whose active layer has an ordered structure Semiconductor laser whose active layer has an ordered structure

1992-02-19

1994-04-19

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

053053419

ABSTRACT:
According to this invention, in a semiconductor laser, an n-type InGaAlP cladding layer, an InGaP active layer, and a p-type InGaAlP cladding layer are sequentially grown on an n-type GaAs substrate to form a double hetero structure. The active layer is constituted by an ordered structure having regularity in the <111> directions, and the p-type cladding layer is constituted by a disordered structure. Band discontinuity in conduction band between the active layer and the p-type cladding layer is increased to improve the temperature characteristics of the laser.

REFERENCES:
patent: 5157679 (1992-10-01), Kondow et al.
Japanese Journal of Applied Physics, vol. 27, No. 8, pp. 1549-1552, Aug., 1988, T. Suzuki, et al., "P-Type Doping Effects on Band-Gap Energy for Ga.sub.0.5 In.sub.0.5 P Grown by Metalorganic Vapor Phase Epitaxy".
Japanese Journal of Applied Physics, vol. 27, No. 11, pp. 2098-2106, Nov., 1988, T. Suzuki, et al., "Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy".
Japanese Journal of Applied Physics, Supplements. Extended Abstracts 22th Conference on Solid State Devices and Materials, 1990, pp. 565-568, K. Itaya, et al., "High-Temperature CW Operation of 630 nm Band InGaAIP Visible Light Laser Diodes".
SPIE Proceedings of the Optical Data Storage Topical Meeting, vol. 1078, Jan. 1989, pp. 60-70, D. P. Bour, "Visible Semiconductor Lasers".
Applied Physics Letters, vol. 50, No. 11, Mar. 6, 1987, pp. 673-675, A. Gomyo, et al., "Evidence for The Existence of An Ordered State in Ga.sub.0.5 In.sub.0.6 P Grown by Metalorganic Vapor Phase Epitaxy and Its Relation to Band-Gap Energy".
IEEE Journal of Quantum Electronics, vol. QE-23, No. 6, Jun. 1987, pp. 704-711, Kenichi Kobayashi, et al., "AlGaInP Double Heterostructure Visible-Light Laserdiodes with a GaInP Active Layer Grown by Metalorganic Vapor Phase Epitaxy".
Japanese Journal of Applied Physics, vol. 29, No. 9, Sep. 1990, pp. L1669-L1671, Kenichi Kobayashi, et al., "632.7 nm CW Operation (20.degree. C.) of AlGaInP Visible Laser Diodes Fabricated on (001) 6.degree. Degree Off Toward <110> GaAs Substrate".

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