Semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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Details

C257S078000, C257S085000, C257S094000, C257SE25019

Reexamination Certificate

active

07915606

ABSTRACT:
A semiconductor light emitting device including a substrate including a plurality of discrete and separated protruding reflective patterns protruding from the substrate and including a valley; a first semiconductor layer on the substrate and covering the reflective patterns; a gap formed in the valley of a corresponding reflective pattern between the substrate and the first semiconductor layer; an active layer on the first semiconductor layer; and a second semiconductor layer on the active layer.

REFERENCES:
patent: 4638334 (1987-01-01), Burnham et al.
patent: 2007/0036189 (2007-02-01), Hori et al.
patent: 2007/0267646 (2007-11-01), Wierer et al.

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