Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2011-01-25

2011-01-25

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S293000, C257SE31001

Reexamination Certificate

active

07875490

ABSTRACT:
An image sensor includes a semiconductor substrate including circuitry, an interlayer dielectric including metal lines arranged on the semiconductor substrate, crystalline photodiode patterns arranged on the interlayer dielectric such that the photodiode patterns are connected to the metal lines, hard mask patterns arranged on the respective photodiode patterns, a device-isolation trench interposed between the adjacent photodiode patterns, to isolate the photodiode patterns from each other, a barrier film implanted with impurity ions, arranged into the inner wall of the device-isolation trench, and a device-isolation insulating layer arranged over the interlayer dielectric including the photodiode pattern and the device-isolation trench.

REFERENCES:
patent: 6325977 (2001-12-01), Theil

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