Method of forming mask for lithography, method of forming...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C257SE27122

Reexamination Certificate

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07989253

ABSTRACT:
A method of forming a mask for lithography includes the step of forming the mask by using reverse data in which positions of at least part of output terminals are reversed, when forming the mask for lithography used for manufacturing a back-illuminated solid-state imaging device which takes incident light from the side of a surface opposite to the side of a surface on which wiring of a device region in which photoelectric conversion elements are formed is formed.

REFERENCES:
patent: 2008/0158137 (2008-07-01), Yoshida
patent: 2003-031785 (2003-01-01), None

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