Lithography simulation method, computer program product, and...

Details Lithography simulation method, computer program product, and... Lithography simulation method, computer program product, and...

2011-07-26

2011-07-26

Young, Christopher G (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S005000, C430S313000, C430S323000, C716S053000

Reexamination Certificate

active

07985517

ABSTRACT:
A lithography simulation method for estimating an optical image to be formed on a substrate when a mask pattern is transferred onto the substrate includes dividing the mask pattern into first calculation areas having sizes determined by a range affected by OPC, the range being obtained correspondingly to an exposure wavelength, a numerical aperture and an illumination shape which are used in the transferring the mask pattern onto the substrate, dividing the each of the first calculation areas into second calculation areas, calculating first electromagnetic field distributions formed by illuminating the mask pattern with exposure light and corresponding to the second calculation areas, obtaining second electromagnetic field distributions corresponding to the first calculation areas by synthesizing the first electromagnetic field distributions for each of the first calculation areas, and calculating the optical image to be formed on the substrate by using the second electromagnetic field distributions.

REFERENCES:
patent: 2008/0163142 (2008-07-01), White et al.
patent: 2008/0301621 (2008-12-01), Fukuhara et al.
patent: 2007-248391 (2007-09-01), None

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