Solid-state imaging device, production method of the same,...

Details Solid-state imaging device, production method of the same,... Solid-state imaging device, production method of the same,...

2011-02-08

2011-02-08

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S292000, C257S290000, C257S291000, C257S294000, C257S440000, C257S443000, C257S444000, C257S447000, C257S460000, C257S462000, C257S465000, C257SE31032, C257SE31127

Reexamination Certificate

active

07884436

ABSTRACT:
In a solid-state imaging device, the pixel circuit formed on the first surface side of the semiconductor substrate is shared by a plurality of light reception regions. The second surface side of the semiconductor substrate is made the light incident side of the light reception regions. The second surface side regions of the light reception regions formed in the second surface side part of the semiconductor substrate are arranged at approximately even intervals and the first surface side regions of the light reception regions formed in the first surface side part of the semiconductor substrate are arranged at uneven intervals, respectively, and the second surface side regions and the first surface side regions are joined respectively in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

REFERENCES:
patent: 7638804 (2009-12-01), Kido et al.
patent: 2009/0231440 (2009-09-01), Lai et al.
patent: 2009/0261440 (2009-10-01), Kawasaki
patent: 2010/0123069 (2010-05-01), Mao et al.
patent: 63-100879 (1988-05-01), None
patent: 2004-128193 (2004-04-01), None

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