Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2011-07-12
2011-07-12
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S225000, C257S229000, C257S230000
Reexamination Certificate
active
07977710
ABSTRACT:
A solid state imaging device in which Υ characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.
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Japanese Office Action issued on Oct. 6, 2009, for corresponding Japanese Patent Application JP 2004-292873.
K&L Gates LLP
Nguyen Thinh T
Sony Corporation
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