Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-06-07

2011-06-07

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257S736000, C257S762000, C257S684000, C257SE23167

Reexamination Certificate

active

07956462

ABSTRACT:
A semiconductor device having a multilayer wiring structure and a manufacturing method thereof are provided. A semiconductor device and a manufacturing method thereof are provided in which the reliability and the manufacturing yield are high and the design constraint is small. Wirings are formed on a substrate. Low dielectric constant films are formed around the wirings. Reinforcement insulating films are formed in a dielectric material of a larger elastic modulus than that of a formation material of the low dielectric constant films and are arranged to overlap with the wirings when viewed perpendicularly to a substrate surface. Reinforcement insulating films are arranged to intersect with the wirings.

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International Search Report of PCT/JP2005/014999, date of mailing Nov. 15, 2005.

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