Method for metallization of a semiconductor device

Details Method for metallization of a semiconductor device Method for metallization of a semiconductor device

2011-05-24

2011-05-24

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S082000, C257SE21499

Reexamination Certificate

active

07947527

ABSTRACT:
A method for metallization of a semiconductor device. This method includes a) metallizing a set of collection fingers with a low-temperature serigraphy paste on at least a front surface of the semiconductor device, b) sintering, at a temperature below a temperature that would damage the semiconductor device, the serigraphy paste forming the set of metallized collection fingers, by performing a pressing operation on the collection fingers with a press, and c) metallizing at least one collection bus on the set of metallized collection fingers, electrically connecting the collection fingers to one another, with a low-temperature serigraphy paste.

REFERENCES:
patent: 5066340 (1991-11-01), Iwamoto et al.
patent: 5131954 (1992-07-01), Vogeli et al.
patent: 5213628 (1993-05-01), Noguchi et al.
patent: 6091019 (2000-07-01), Sakata et al.
patent: 2003/0005954 (2003-01-01), Emoto et al.
patent: 2006/0275936 (2006-12-01), Ribeyron et al.
patent: 0684652 (1995-05-01), None
patent: 0 684 652 (1995-11-01), None
patent: 0 751 575 (1997-01-01), None
patent: 0 848 431 (1998-06-01), None
patent: 1 102 331 (2001-05-01), None
patent: 2 878 374 (2006-05-01), None
patent: 2006/077343 (2006-07-01), None
patent: WO 2006/085021 (2006-08-01), None

Affiliated with

Also associated with

Rating

Method for metallization of a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for metallization of a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for metallization of a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2622091